Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material with...
Reexamination Certificate
2005-08-02
2005-08-02
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material with...
C257S255000
Reexamination Certificate
active
06924506
ABSTRACT:
A silicon film provided on a blocking film102on a substrate101is made amorphous by doping Si+, and in a heat-annealing process, crystallization is started in parallel to a substrate from an area100where lead serving as a crystallization-promoting catalyst is introduced.
REFERENCES:
patent: 3692574 (1972-09-01), Kobayashi
patent: 3749614 (1973-07-01), Boleky, III et al.
patent: 4309224 (1982-01-01), Shibata
patent: 4319395 (1982-03-01), Lund et al.
patent: 4406709 (1983-09-01), Celler et al.
patent: 4466179 (1984-08-01), Kasten
patent: 4561171 (1985-12-01), Schlosser
patent: 4717681 (1988-01-01), Curran
patent: 4727044 (1988-02-01), Yamazaki
patent: 4740829 (1988-04-01), Nakagiri et al.
patent: 4757026 (1988-07-01), Woo et al.
patent: 4766477 (1988-08-01), Nakagawa et al.
patent: 4772564 (1988-09-01), Barnett et al.
patent: 4822752 (1989-04-01), Sugahara et al.
patent: 4897361 (1990-01-01), Harriott et al.
patent: 4904611 (1990-02-01), Chiang et al.
patent: 4946799 (1990-08-01), Blake et al.
patent: 4951601 (1990-08-01), Maydan et al.
patent: 4986213 (1991-01-01), Yamazaki et al.
patent: 4988213 (1991-01-01), Mattle
patent: 4992846 (1991-02-01), Sakakibara et al.
patent: 5010033 (1991-04-01), Tokunaga et al.
patent: 5075259 (1991-12-01), Moran
patent: 5145808 (1992-09-01), Sameshima et al.
patent: 5147826 (1992-09-01), Liu et al.
patent: 5162892 (1992-11-01), Hayashi et al.
patent: 5170244 (1992-12-01), Dohjo et al.
patent: 5177578 (1993-01-01), Kakinoki et al.
patent: 5212101 (1993-05-01), Canham et al.
patent: 5242858 (1993-09-01), Sakamoto et al.
patent: 5262350 (1993-11-01), Yamazaki
patent: 5275851 (1994-01-01), Fonash et al.
patent: 5278093 (1994-01-01), Yonehara
patent: 5279679 (1994-01-01), Murakami et al.
patent: 5288658 (1994-02-01), Ishihara
patent: 5289030 (1994-02-01), Yamazaki et al.
patent: 5294560 (1994-03-01), Ono et al.
patent: 5296405 (1994-03-01), Yamazaki et al.
patent: 5318661 (1994-06-01), Kumomi
patent: 5326991 (1994-07-01), Takasu
patent: 5352291 (1994-10-01), Zhang et al.
patent: 5385863 (1995-01-01), Tatsumi et al.
patent: 5403772 (1995-04-01), Zhang et al.
patent: 5422302 (1995-06-01), Yonehara et al.
patent: 5424244 (1995-06-01), Zhang et al.
patent: 5426064 (1995-06-01), Zhang et al.
patent: 5431182 (1995-07-01), Brown
patent: 5439837 (1995-08-01), Hata et al.
patent: 5457058 (1995-10-01), Yonehara
patent: 5476799 (1995-12-01), Sakamoto et al.
patent: 5481121 (1996-01-01), Zhang et al.
patent: 5488000 (1996-01-01), Zhang et al.
patent: 5492843 (1996-02-01), Adachi et al.
patent: 5501989 (1996-03-01), Takayama et al.
patent: 5508533 (1996-04-01), Takemura
patent: 5529937 (1996-06-01), Zhang et al.
patent: 5531182 (1996-07-01), Yonehara
patent: 5534716 (1996-07-01), Takemura
patent: 5543352 (1996-08-01), Ohtani et al.
patent: 5545571 (1996-08-01), Yamazaki et al.
patent: 5563426 (1996-10-01), Zhang et al.
patent: 5569610 (1996-10-01), Zhang et al.
patent: 5569936 (1996-10-01), Zhang et al.
patent: 5580792 (1996-12-01), Zhang et al.
patent: 5585291 (1996-12-01), Ohtani et al.
patent: 5589406 (1996-12-01), Kato et al.
patent: 5589694 (1996-12-01), Takayama et al.
patent: 5595923 (1997-01-01), Zhang et al.
patent: 5595944 (1997-01-01), Zhang et al.
patent: 5597741 (1997-01-01), Sakamoto et al.
patent: 5604360 (1997-02-01), Zhang et al.
patent: 5605846 (1997-02-01), Ohtani et al.
patent: 5606179 (1997-02-01), Yamazaki et al.
patent: 5608232 (1997-03-01), Yamazaki et al.
patent: 5612250 (1997-03-01), Ohtani et al.
patent: 5614426 (1997-03-01), Funada et al.
patent: 5614733 (1997-03-01), Zhang et al.
patent: 5616506 (1997-04-01), Takemura
patent: 5620910 (1997-04-01), Teramoto
patent: 5621224 (1997-04-01), Yamazaki et al.
patent: 5624851 (1997-04-01), Takayama et al.
patent: 5637515 (1997-06-01), Takemura
patent: 5639698 (1997-06-01), Yamazaki et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5646424 (1997-07-01), Zhang et al.
patent: 5654203 (1997-08-01), Ohtani et al.
patent: 5656825 (1997-08-01), Kusumoto et al.
patent: 5663077 (1997-09-01), Adachi et al.
patent: 5677549 (1997-10-01), Takayama et al.
patent: 5696386 (1997-12-01), Yamazaki
patent: 5696388 (1997-12-01), Funada et al.
patent: 5700333 (1997-12-01), Yamazaki et al.
patent: 5705829 (1998-01-01), Miyanaga et al.
patent: 5712191 (1998-01-01), Nakajima et al.
patent: 5739590 (1998-04-01), Sakamoto et al.
patent: 5773846 (1998-06-01), Zhang et al.
patent: 5789762 (1998-08-01), Koyama et al.
patent: 5808321 (1998-09-01), Mitanaga et al.
patent: 5818076 (1998-10-01), Zhang et al.
patent: 5824573 (1998-10-01), Zhang et al.
patent: 5830784 (1998-11-01), Zhang et al.
patent: 5859443 (1999-01-01), Yamazaki et al.
patent: 5895933 (1999-04-01), Zhang et al.
patent: 5897347 (1999-04-01), Yamazaki et al.
patent: 5932893 (1999-08-01), Miyanaga et al.
patent: 5942768 (1999-08-01), Zhang
patent: 5953598 (1999-09-01), Hata et al.
patent: 5962871 (1999-10-01), Zhang et al.
patent: 6037610 (2000-03-01), Zhang et al.
patent: 6087679 (2000-07-01), Yamazaki et al.
patent: 6090646 (2000-07-01), Zhang et al.
patent: 6121076 (2000-09-01), Zhang et al.
patent: 6160279 (2000-12-01), Zhang et al.
patent: 6211536 (2001-04-01), Zhang
patent: 6285042 (2001-09-01), Ohtani et al.
patent: 6294815 (2001-09-01), Yamazaki et al.
patent: 2002/0047118 (2002-04-01), Zhang et al.
patent: 0 251 767 (1988-01-01), None
patent: 0 390 608 (1990-10-01), None
patent: 0 480 178 (1992-04-01), None
patent: 53-027371 (1978-03-01), None
patent: 54-070762 (1979-06-01), None
patent: 57-102067 (1982-06-01), None
patent: 59-161870 (1984-09-01), None
patent: 60-055665 (1985-03-01), None
patent: 60-091623 (1985-05-01), None
patent: 60-143666 (1985-07-01), None
patent: 60-164316 (1985-08-01), None
patent: 61-063017 (1986-04-01), None
patent: 61-084074 (1986-04-01), None
patent: 62-174973 (1987-07-01), None
patent: 63-170971 (1988-07-01), None
patent: 63-204769 (1988-08-01), None
patent: 63-278217 (1988-11-01), None
patent: 64-001273 (1989-01-01), None
patent: 64-011369 (1989-01-01), None
patent: 64-049257 (1989-02-01), None
patent: 64-050569 (1989-02-01), None
patent: 01-125866 (1989-05-01), None
patent: 01-152719 (1989-06-01), None
patent: 01-270309 (1989-10-01), None
patent: 02-098143 (1990-04-01), None
patent: 02-140915 (1990-05-01), None
patent: 02-159730 (1990-06-01), None
patent: 02-222546 (1990-09-01), None
patent: 02-237037 (1990-09-01), None
patent: 02-260524 (1990-10-01), None
patent: 02-275641 (1990-11-01), None
patent: 03-029316 (1991-02-01), None
patent: 03-280420 (1991-12-01), None
patent: 04-091425 (1992-03-01), None
patent: 04-137619 (1992-05-01), None
patent: 04-305940 (1992-10-01), None
patent: 04-337626 (1992-11-01), None
patent: 05-047791 (1993-02-01), None
patent: 05-067635 (1993-03-01), None
patent: 05-109737 (1993-04-01), None
patent: 63-295065 (1998-11-01), None
Schoenfeld et al., “Crystallization of amorphous silicon by NiSi2 precipitates” Thin Solid Films, vol. 261 pp 236-240, Elsevier 1995.
Borders et al., “Modern Materials Analysis Techniques”, Oct. 1986, An MRS Short Course, pp. 62-63.
Y. Kawazu et al.,Low-Temperature Crystallization of Hydrogenated Amorphous Silicon Induced by Nickel Silicide Formation, Japanese Journal of Applied Physics, vol. 29, No. 12, Dec., 1990, pp. 2698-2704.
V. Subramanian et al.,A Novel Technique for 3-D Integration: Ge-seeded Laterally Crystalized TFTs, 1997 Symposium on VLSI Technology Digest of Technical Papers, 8A-3, pp. 97-98.
T. Sato et al.,Mobility Anisotropy of Electrons in Inversion Layers on Oxidated Silicon Surafaces, Physical Review B, vol. 4, No. 6, Sep. 15, 1971, pp. 1950-1960.
M. Kishino et al.,Physics of VLSI Device, pp. 144-145.
“Selective Area Crystalline of Amorphous Silicon Films By Low-Temperature Rapid Thermal Annealing”, Appl. Phys,. Lett., vol. 55, No. 17, Aug. 14, 1989.
C. Hayzelden et al., “In Situ Transmission Electron Microscopy Studies of Silicide-Mediated Crystallization of Amorphous Silicon” (3 pages).
A.V. Dvurechenskii et al., “Transport Phenomena in Amorphous Silicon Doped by Ion Implantation
Takayama Toru
Zhang Hongyong
Coleman W. David
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Semiconductor device having channel formation region... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device having channel formation region..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having channel formation region... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3508591