Semiconductor device having capacitor

Details Semiconductor device having capacitor Semiconductor device having capacitor

1996-07-22

1997-08-26

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257306, 257310, 365145, 365149, H01L 27108, H01G 706

Patent

active

056613199

ABSTRACT:
This is a semiconductor device having an integrated circuit and a capacitor formed on a semiconductor substrate. The capacitor comprises a bottom electrode serving also as a part of a diffusion layer of the integrated circuit, a dielectric film being formed on the bottom electrode, and a top electrode of a conductive film being formed on the dielectric film. In particular, it is preferred to form the dielectric film in two layers of dielectric film, and compose the dielectric film contacting with the bottom electrode of a dielectric material in a composition possessing an excess of a metal element than the stoichiometric composition.

REFERENCES:
patent: 5053917 (1991-10-01), Miyasaka et al.
patent: 5187638 (1993-02-01), Sandhu et al.
patent: 5206788 (1993-04-01), Larson et al.
patent: 5229309 (1993-07-01), Kato
patent: 5241211 (1993-08-01), Tashiro
patent: 5281837 (1994-01-01), Kohyama
patent: 5293075 (1994-03-01), Onishi et al.
patent: 5313089 (1994-05-01), Jones, Jr.
patent: 5519234 (1996-05-01), Paz de Arauso
Translation of Japan Kokai Publication #04-0206871 to Veda et al., 11 pages.
Translation of Japan Kokai Publication #04-0072778 to Iwamatsu, 3 pages.
IEEE Journal of Solid-State Circuits, 24:1, pp. 165-173, "Low-Voltage Coefficient Capictors For VLSI Processes", Slater and Paulos (Feb. 1989).

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