Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-06-20
2000-04-04
Crane, Sara
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257306, 257310, H01L 2976
Patent
active
060464674
ABSTRACT:
A capacitor 25 is formed on an insulating layer 21a formed on a semiconductor substrate 21. The end portion of a capacitor insulating layer 23 is positioned between the end portion of a bottom electrode 22 and the end portion of a top electrode 24. A passivation layer 26 for covering the capacitor 25 is formed. Interconnections 28 are connected to the bottom electrode 22 through a first hole 27a and to the top electrode 24 through a second hole 27b. In this way, since the end portion of the capacitor insulating layer 23 is out of the end portion of the top electrode 24, the end portion of the capacitor insulating layer 23 injured by etching does not affect the capacitance.
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Nagata et al., "A GaAs MMIC Chip-Set for Mobile Communications Using On-Chip Ferroelectric Capacitors", IEEE International Solid-State Circuits Conference, (1993), New York, pp. 172 & Digest pp. 1 and 2.
Scott, et al., "Ferroelectric Memory Applications", IEEE 1989 Ultrasonics Symposium, pp. 299-308.
R. Cuppens, "Ferroelectrics for Non-volatile Memories", Microelectronic Engineering 19 (1992), pp. 245-252.
Arita Koji
Fujii Eiji
Matsuda Akihiro
Nagano Yoshihisa
Nasu Toru
Crane Sara
Matsushita Electronics Corporation
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