Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-01-06
1998-02-10
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257310, 257311, 257532, 257637, H01L 2976
Patent
active
057172331
ABSTRACT:
A semiconductor device comprising an integrated circuit and a capacitor. In this capacitor, a bottom electrode, a dielectric film and a top electrode are formed, independently of the integrated circuit, on the interlayer insulating film, and the top electrode and bottom electrode are connected with metal interconnections through contact holes opened in the protective film for protecting the surface of the capacitor. In this constitution, either the top electrode or the bottom electrode is connected the bias line of the integrated circuit, and the other is connected to the ground line, so that extraneous emission may be reduced without having to connect the capacitor outside.
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Arita Koichi
Fujii Eiji
Hayashi Shinitirou
Inoue Atsuo
Kibe Masaki
Carroll J.
Matsushita Electric - Industrial Co., Ltd.
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