Semiconductor device having buried gate electrode with silicide

Details Semiconductor device having buried gate electrode with silicide Semiconductor device having buried gate electrode with silicide

1998-08-14

1999-11-30

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257333, 257384, H01L 2976, H01L 2994, H01L 31062, H01L 31113, H01L 31119

Patent

active

059947365

ABSTRACT:
A semiconductor device in which a salicide structure is applied to a buried gate transistor to largely reduce a difference of level or height in a element and to reduce the resistance of a gate electrode and a source/drain structure, thus enabling reliable high speed operations while maintaining high performance. For manufacturing the semiconductor device, a silicon substrate is formed with a groove for a buried gate. A gate insulating film is formed on the bottom surface of the groove. Then, side-wall insulating films are formed on both side surfaces of the groove in a large thickness as compared with that of the gate insulating film. Next, after a gate electrode is formed from a polycrystalline silicon film, a source/drain structure is formed in the silicon substrate through the gate electrode and the side-wall insulating film. Then, a Ti film is formed and annealed to form silicide layers on the gate electrode and on the source/drain electrodes, thus completing a salicide structure.

REFERENCES:
patent: 4885617 (1989-12-01), Mazure-Espejo et al.
patent: 4952993 (1990-08-01), Okumura
patent: 5444282 (1995-08-01), Yamaguchi et al.
patent: 5448094 (1995-09-01), Hsu

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