Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Configuration or pattern of bonds
Patent
1994-05-20
1995-12-05
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Configuration or pattern of bonds
257737, 257780, 257751, H01L 21321, H01L 2104
Patent
active
054731976
ABSTRACT:
Pads are formed on a semiconductor substrate and the pads are covered with a passivation film. Openings are formed in the passivation film and the pads are exposed via the openings. A barrier metal layer is formed on the bottom surface and side surface of each of the openings and the upper surface of the passivation film lying on the periphery of each of the openings. Bump electrodes are filled in the openings and project upwardly from the openings. The area of the upper surface of the bump electrode is larger than the area of the bottom surface thereof connected to the pad. The cross section of the bump electrode in a direction along the periphery of the semiconductor substrate takes a rectangular form and the cross section of the bump electrode in a direction perpendicular to the periphery of the semiconductor substrate takes a trapezium form having an upper side longer than a bottom side thereof.
REFERENCES:
patent: 5049972 (1991-09-01), Uda et al.
patent: 5061985 (1991-10-01), Meguro et al.
Ezawa Hirokazu
Idaka Toshiaki
Kabushiki Kaisha Toshiba
Limanek Robert P.
Williams Alexander Oscar
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