Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold
Reexamination Certificate
2011-03-22
2011-03-22
Nguyen, Khiem D (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
C257S495000, C257SE29013, C438S140000
Reexamination Certificate
active
07911020
ABSTRACT:
A semiconductor device has an active portion having at least one well region in a semiconductor layer, and a breakdown voltage maintaining structure surrounding the active portion. The maintaining structure includes a conductor layer over each of a plurality of guard rings with an insulating film interposed in between and connected to the respective guard ring. An inner side end portion of each conductor layer projects over the immediate adjacent inner side guard ring. The impurity concentration of the guard rings is set between the impurity concentrations of the semiconductor layer and the well regions. A field plate can extend over the innermost conductor layer with the insulating film interposed in between. The field plate is in contact with the outermost well region and is in contact with the first conductor layer. The outer side end of the field plate extends outwardly beyond an outer side end of the innermost conductor layer. With these arrangements, the guard rings can be shortened and the chip size can be reduced. Furthermore, the device can be made less susceptible to external charge.
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Inoue Masanori
Kobayashi Takashi
Niimura Yasushi
Onishi Yasuhiko
Fuji Electric Systems Co., Ltd.
Nguyen Khiem D
Rossi, Kims & McDowell LLP
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