Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1986-07-18
1988-03-08
Miller, Stanley D.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307448, 307449, 307451, 307475, H03K 1901
Patent
active
047301325
ABSTRACT:
The invention relates to a semiconductor device which has a high density of integration and of which a low power consumption is required. The semiconductor device prevents the influence of the amplitude of an input signal upon the amplitude of an output signal in such a way that a preceding circuit and a succeeding circuit are provided with different reference voltages. The semiconductor device is constructed of a circuit which includes a bipolar transistor and an insulated-gate field effect transistor, and which operates with reference to one or more voltages, at least one of the reference voltages having a voltage value different from a reference operating voltage of a preceding circuit. A first switching circuit is interposed between a first reference voltage and an input node of a driver circuit, and a second switching circuit is interposed between an output of a preceding circuit and the input of the driver circuit, so that when an output signal of the preceding circuit is at a high level, the seconding circuit switch is turned "on" while the first switching circuit is turned "off" thereby to produce a still higher potential, and that when the output signal of the preceding circuit is at a low level, the second switching circuit is turned "off" while the first switching circuit is turned "on". The semiconductor device is suited to high-density DRAM and SRAM circuits which use voltage limiters.
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Hori Ryoichi
Itoh Kiyoo
Kawahara Takayuki
Kawajiri Yoshiki
Kitukawa Goro
Hitachi , Ltd.
Hudspeth D. R.
Miller Stanley D.
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