Semiconductor device having bipolar-mos composite element pellet

Details Semiconductor device having bipolar-mos composite element pellet Semiconductor device having bipolar-mos composite element pellet

1993-09-21

1994-12-27

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257327, 257328, 257329, 257773, 257775, H01L 2910, H01L 2978, H01L 2348, H01L 2946

Patent

active

053768159

ABSTRACT:
A semiconductor device having a bipolar MOS composite element pellet suitable for a compression structure. In this pellet, a semiconductor substrate on which a MOS composite element is formed is electrically connected to an external part by an electrode plate compressed to the substrate.

REFERENCES:
patent: 4775916 (1988-10-01), Kouzuchi et al.
patent: 4987099 (1991-01-01), Flanner
patent: 5003371 (1991-03-01), Tailliet et al.
K. P. Lisiak et al., "Optimization of Nonplanar Power MOS Transistors", IEEE Transaction on Electron Devices, vol. ED-25 (Oct. 1978) p. 1229-1234.
Tsunoda, T., "High-Power, High Speed Toshiba IGBT Module," Toshiba Discrete Semiconductor Engineering Dept., 1987.

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