Semiconductor device having at least one PN junction and channel

Details Semiconductor device having at least one PN junction and channel Semiconductor device having at least one PN junction and channel

1975-08-13

1977-05-17

James, Andrew J.

357 52, 357 15, 357 68, H01L 2934, H01L 2940, H01L 2948, H01L 2956

Patent

active

040245640

ABSTRACT:
A semiconductor device is disclosed which has a first semiconductor layer of one conductivity type and low impurity concentration, a second semiconductor region of the opposite conductivity type forming a PN junction with the first semiconductor layer, a third semiconductor region of the first mentioned conductivity type formed in the first semiconductor layer which surrounds the PN junction and forms an LH junction with the first semiconductor layer, a passivating layer covering at least the PN and LH junctions, and a conductive layer extending on the passivating layer covering at least the inner periphery of the third region and connected to the first semiconductor layer through an electric barrier layer.

REFERENCES:
patent: 3283170 (1966-11-01), Buie
patent: 3601668 (1971-08-01), Slaten
patent: 3684933 (1972-08-01), Schulz et al.
patent: 3694705 (1972-09-01), Wenzig
patent: 3751722 (1973-08-01), Richman
patent: 3760241 (1973-09-01), Epple
Extract from Texas Instrument Booklet, New Products Review for Wescon, 1964.

Affiliated with

Also associated with

Rating

Semiconductor device having at least one PN junction and channel does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having at least one PN junction and channel, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having at least one PN junction and channel will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1838287