Semiconductor device having asymmetric bulb-type recess gate...

Details Semiconductor device having asymmetric bulb-type recess gate... Semiconductor device having asymmetric bulb-type recess gate...

2006-12-29

2010-11-02

Landau, Matthew C (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000, C257S331000, C257S334000, C257SE21233, C257SE21429, C438S270000, C438S286000

Reexamination Certificate

active

07825463

ABSTRACT:
A semiconductor device includes a silicon substrate; a device isolation structure formed in the silicon substrate to delimit an active region which has a pair of gate forming areas, a drain forming area between the gate forming areas, and source forming areas outside the gate forming areas; an asymmetric bulb-type recess gate formed in each gate forming area of the active region and having the shape of a bulb on the lower end portion of the sidewall thereof facing the source forming area; and source and drain areas respectively formed on the surface of the substrate on both sides of the asymmetric bulb-type recess gate.

REFERENCES:
patent: 6605838 (2003-08-01), Mandelman et al.
patent: 2006/0237817 (2006-10-01), Park
patent: 2007/0235778 (2007-10-01), Shim
patent: 2009/0114999 (2009-05-01), Seo et al.

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