Semiconductor device having analog and digital circuits

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S355000, C257S356000, C257SE21632, C257SE27064

Reexamination Certificate

active

07554158

ABSTRACT:
An N-type deep well is used to protect a circuit from a noise. However, a noise with a high frequency propagates through the N-type deep well, and as a result, the circuit that should be protected malfunctions. To reduce the area of the N-type deep well. For instance, in the present invention, a semiconductor device comprises a semiconductor substrate of a first conductivity type, a digital circuit part and an analog circuit part provided on the semiconductor substrate, a plurality of wells of the first conductivity type formed in either the analog circuit part or the digital circuit part, and a first deep well of a second conductivity type, which is the opposite conductivity type to the first conductivity type, isolating some of the plurality of wells from the semiconductor substrate.

REFERENCES:
patent: 5559356 (1996-09-01), Yukawa
patent: 5994741 (1999-11-01), Koizumi et al.
patent: 6911700 (2005-06-01), Okamoto
patent: 7176530 (2007-02-01), Bulucea et al.
patent: 2004/0056314 (2004-03-01), Ohguro
patent: 6-69436 (1994-03-01), None
patent: 6-163823 (1994-06-01), None

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