Semiconductor device having an universal die size inner lead lay

Details Semiconductor device having an universal die size inner lead lay Semiconductor device having an universal die size inner lead lay

1995-02-10

1996-02-06

Heinrich, Samuel M.

Metal fusion bonding

Process

Plural diverse bonding

22818022, 2281805, H01L 2160

Patent

active

054890594

ABSTRACT:
A substrate includes a non-conductive support layer and a plurality "n" of conductive leads disposed on the support layer. The leads are arranged in a generally radial pattern about a central point on the support layer, each of the leads having a width "w" and spaced a distance "d" from one another at their innermost ends, thereby forming a generally square opening of side dimension "s". The substrate accommodates semiconductor dies ranging in size from smaller than the opening, to approximately equal to that of the opening, to substantially larger than the opening, such as four times the size (linear dimension) of the opening. The die is bonded to the substrate. Other elements of a semiconductor device assembly are added to the resulting structure. Method and apparatus are disclosed.

REFERENCES:
patent: 4918811 (1990-04-01), Eichelberger et al.
patent: 5172471 (1992-12-01), Huang
patent: 5185613 (1993-02-01), Whatmore et al.

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