Semiconductor device having an undercoat layer and method of...

Details Semiconductor device having an undercoat layer and method of... Semiconductor device having an undercoat layer and method of...

2005-09-23

2009-06-23

Smith, Matthew (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

With lattice constant mismatch

C257S086000, C257S091000, C257S098000, C257S631000, C257S764000, C257S770000, C257SE31124

Reexamination Certificate

active

07550782

ABSTRACT:
In a semiconductor device in which a group III nitride compound semiconductor layer is formed without a low temperature grown buffer layer provided on an undercoat layer formed by a metal nitride layer, the metal nitride layer is formed of reddish brown titanium nitride. The reddish brown titanium nitride can be obtained by causing nitrogen to be rich in the titanium nitride.

REFERENCES:
patent: 6426512 (2002-07-01), Ito et al.
patent: 2002/0047205 (2002-04-01), Trivedi et al.
patent: 2005/0151255 (2005-07-01), Ando et al.
patent: 2000-77712 (2000-03-01), None
patent: 2000-114597 (2000-04-01), None
patent: 2002-43617 (2002-02-01), None
F.A. Ponce, et al., “Determination of lattice polarity for growth on GaN bulk single crystals and epitaxial layers”, Applied Physics Letter, vol. 69, No. 3, Jul. 15, 1996.

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