Semiconductor device having an under stepped gate for...

Details Semiconductor device having an under stepped gate for... Semiconductor device having an under stepped gate for...

2007-09-11

2007-09-11

Tran, Long K. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S334000, C257S354000, C257S029000, C257S029000

Reexamination Certificate

active

11251700

ABSTRACT:
A semiconductor device and a method of manufacturing the same capable of preventing a not open fail of a landing plug contact caused by the leaning of a gate. The method includes the steps of preparing a semiconductor substrate, forming first recesses by etching an active area of the semiconductor substrate, filling a conductive layer in the first recesses, forming a second recess by etching a predetermined part of the active area, forming under stepped gates, forming a gate insulating layer on a surface of the semiconductor substrate, forming a channel layer on the gate insulating layer, forming source/drain areas in the semiconductor substrate, forming an interlayer insulating film on an entire surface of the semiconductor substrate, and forming a landing plug in the interlayer insulating film such that the landing plug makes contact with the source/drain areas, respectively.

REFERENCES:
patent: 7102187 (2006-09-01), Yoo
patent: 2005/0093058 (2005-05-01), Park et al.
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patent: 1020040002009 (2004-01-01), None
Korean Patent Gazette, published Mar. 29, 2007.

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