Semiconductor device having an STI structure and a dummy...

Details Semiconductor device having an STI structure and a dummy... Semiconductor device having an STI structure and a dummy...

2006-04-25

2006-04-25

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S510000

Reexamination Certificate

active

07034367

ABSTRACT:
An inventive method for fabricating a semiconductor device includes the steps of: a) forming trenches in an actual element region and a dummy pattern region of a substrate by using a mask; b) depositing an insulator over the substrate, thereby forming an insulating film that fills at least the trenches; and c) removing a portion of the insulating film protruded from the trenches, thereby forming, in the trenches within the actual element region, a first embedded insulating film for isolation, and forming a second embedded insulating film in the trenches within the dummy pattern region. The dummy pattern region has dummy patterns in which no trenches are formed, and the widthwise size of each dummy pattern is four times or less of the depth of a portion of each trench provided in the substrate.

REFERENCES:
patent: 5789792 (1998-08-01), Tsutsumi
patent: 5976949 (1999-11-01), Chen
patent: 2001-176959 (2001-06-01), None

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