Semiconductor device having an SOI structure of mesa isolation t

Details Semiconductor device having an SOI structure of mesa isolation t Semiconductor device having an SOI structure of mesa isolation t

1995-07-11

1997-09-02

Levy, Stuart S.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257354, 257386, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

056635885

ABSTRACT:
A semiconductor device of SOI structure formed by the mesa isolation method, which can sufficiently reduce the wiring capacitance even if the width of the isolation trench is large. An SOI layer which constitutes an element region is formed by forming a buried oxide film in a silicon substrate, forming an isolation trench in the buried oxide film and burying an isolating material in the isolation trench. By the formation of the SOI layer with the isolating material, a dummy SOI layer is formed in a field part other than the element region. Then, by the formation of a MOSFET gate wiring on the dummy SOI layer, the wiring capacitance is reduced. Furthermore, the dummy SOI layer is completely depleted when the MOSFET threshold value is applied to the gate wiring.

REFERENCES:
patent: 3859716 (1975-01-01), Tihany
patent: 4753896 (1988-06-01), Matloubian
patent: 5225704 (1993-07-01), Wakamiya et al.
patent: 5262672 (1993-11-01), Iranmanesh
patent: 5371032 (1994-12-01), Nishihara
patent: 5492857 (1996-02-01), Reedy et al.
patent: 5514880 (1996-05-01), Nishimura et al.
patent: 5523964 (1996-06-01), McMillan et al.
Haond, et al: "Lateral Isolation in SOI CMOS Technology", Solid State Technology, Jul. 1991: pp. 47-52.

Affiliated with

Also associated with

Rating

Semiconductor device having an SOI structure of mesa isolation t does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having an SOI structure of mesa isolation t, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having an SOI structure of mesa isolation t will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-311569