Semiconductor device having an SOI structure

Details Semiconductor device having an SOI structure Semiconductor device having an SOI structure

1996-11-12

1998-09-15

Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257347, 257350, 257351, 257366, 257369, 257409, H01L 2900

Patent

active

058083413

ABSTRACT:
FS-isolated fields (10a, 10b), LOCOS-isolated fields (11c, 11d), FS-isolated fields (10e, 10f), LOCOS-isolated field (11g, 11h) and FS-isolated field (10i) are arranged in this order. Thus, a master layout can be provided, where SOI transistors having bodies to be supplied with fixed potential and those having bodies not to be supplied with fixed potential are mixed.

REFERENCES:
patent: 5592009 (1997-01-01), Hidaka
patent: 5633524 (1997-05-01), Ueda et al.
patent: 5635744 (1997-06-01), Hidaka et al.
T. Iwamatsu, et al. "CAD-Compatible High Speed CMOS/SIMOX Technology Using Field-Shield isolation for 1M Gate Array", Proc IEEE IEDM Tech. Digest, (pp. 475-478), Dec. 5-8, 1993.
T. Iwamatsu, et al. "High-Speed 0.5.mu.m SOI 1/8 Frequency Divider with Body-Fixed Structure for Wide Range of Applications", Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials, (pp. 575-577), Osaka 1995.

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