Semiconductor device having an organic resin layer and silicon o

Details Semiconductor device having an organic resin layer and silicon o Semiconductor device having an organic resin layer and silicon o

1996-10-29

1999-08-17

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257759, H01L 23532

Patent

active

059397713

ABSTRACT:
On manufacturing a semiconductor device, preparation is made of an organic layer (101) of a resin which has a relative dielectric constant between 1.8 and 3.5, both inclusive, and which is selected from the group consisting of a polyimide resin and a fluororesin. The organic layer has a slit. A first metal (105) is buried in the slit. A silicon oxide layer (106) containing fluorine is formed on the organic layer so that the silicon oxide layer has a hole on the first metal. A second metal (107) is buried in the hole. Preferably, an additional organic layer (101') of the resin is formed on the silicon oxide layer so that the additional organic layer has an additional slit on the second metal. In this case, a first additional metal (105') is buried in the additional slit. In addition, an additional silicon oxide layer (106') containing fluorine may be formed on the additional organic layer so that the additional silicon oxide layer has an additional hole on the first additional metal. In this event, a second additional metal (107') is buried in the additional hole.

REFERENCES:
patent: 5486493 (1996-01-01), Jeng
patent: 5512775 (1996-04-01), Cho
patent: 5521424 (1996-05-01), Ueno et al.
patent: 5571571 (1996-11-01), Musaka et al.
patent: 5578531 (1996-11-01), Kodera et al.
patent: 5616959 (1997-04-01), Jeng
IBM Technical Disclosure Bulletin, vol. 34, No. 9, Feb. 1992, p. 220.
Japanese Final Office Action, mailed Mar. 18, 1998, in corresponding JPA No. 281602/1995 (translation of relevancy submitted herewith).

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