Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-02-16
2011-10-18
Huynh, Andy (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S671000, C438S699000, C438S902000, C438S952000
Reexamination Certificate
active
08039389
ABSTRACT:
In a making a semiconductor device, a patterning stack above a conductive material that is to be etched has a patterned photoresist layer that is used to pattern an underlying a tetraethyl-ortho-silicate (TEOS) layer. The TEOS layer is deposited at a lower temperature than is conventional. The low temperature TEOS layer is over an organic anti-reflective coating (ARC) that is over the conductive layer. The low temperature TEOS layer provides adhesion between the organic ARC and the photoresist, has low defectivity, operates as a hard mask, and serves as a phase shift layer that helps, in combination with the organic ARC, to reduce undesired reflection.
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Dakshiina-Murthy Srikanteswara
Hall Mark D.
Junker Kurt H.
Patterson Kyle W.
Reber Douglas M.
Clingan, Jr. James L.
Freescale Semiconductor Inc.
Hill Daniel D.
Huynh Andy
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