Semiconductor device having an interconnection layer of a polysi

Details Semiconductor device having an interconnection layer of a polysi Semiconductor device having an interconnection layer of a polysi

1991-12-09

1994-06-14

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257754, H01L 2904

Patent

active

053212967

ABSTRACT:
There is disclosed a semiconductor device which has a first insulating film formed on a surface of a semiconductor substrate, a polysilicon layer formed on the first insulating film, a second insulating film formed on the polysilicon layer, and a metallic interconnection layer formed on the second insulating film. The polysilicon layer is formed thicker at a connection portion than other portions and is connected to the metallic interconnection layer via a hole formed in the second insulating layer. The film thickness of the polysilicon layer is large at the contact forming portion so that it is possible to prevent the contact hole from being formed passing through the polysilicon layer even if the lower polysilicon layer is excessively etched during the contact hole forming process.

REFERENCES:
patent: 4146902 (1979-03-01), Tanimoto et al.
patent: 4916521 (1990-04-01), Yoshikawa et al.
patent: 5136361 (1992-08-01), Wollesen et al.

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