Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1990-06-01
1993-03-02
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257750, 257758, H01L 2994, H01L 2354, H01L 2978
Patent
active
051914026
ABSTRACT:
A semiconductor device includes a substrate, first insulating film carried on the substrate, first wiring layer carried on the first insulating film and an interlayer insulating film overlying the first wiring layer and first insulating film. The interlayer insulating film has a top portion overlying the first wiring layer and a pair of sidewall portions. The sidewall portions of the interlayer insulating film overlie the first insulating film and the sides of the first wiring layer. The sidewall portions have progressively increasing width in progressing towards the substrate. The device also includes a second wiring layer which extends from overlying part of the top portion of the interlayer insulating film to and in contact with an exposed portion of the substrate adjacent to the first insulating film.
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Kondo Toshihiko
Tanaka Kazuo
Yasuda Hirofumi
Clark S. V.
Mintel William
Seiko Epson Corporation
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