Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame – With heat sink means
Patent
1997-11-03
1999-03-23
Williams, Alexander Oscar
Active solid-state devices (e.g., transistors, solid-state diode
Lead frame
With heat sink means
257796, 257693, 257698, 257707, 257709, 257717, 257790, H01L 2302, H01L 2328, H01L 2336, H01L 2334
Patent
active
058864008
ABSTRACT:
An electrical insulation for a heatsink (14) of a semiconductor device (10) is provided by an insulating layer (16) formed on a desired portion or portions of the semiconductor device (10) to protect a semiconductor die (17) from arcing currents due to high voltage potentials. The insulating layer (16) is formed from a non-conductive powder coating which is applied to the semiconductor devices (10) by attracting the powder to the semiconductor device (10) in one of four ways. Either a fluidized powder bed process, an electrostatic fluidized bed process, an electrostatic spraying process, or the powder is applied during the mold process on the desired surface of the semiconductor device (10). Once the powder coating is applied to the heatsink (14), the semiconductor package is cured to form the insulating layer (16). The insulating layer (16) can also be formed over other portions the semiconductor device (10) such as a body (13), leads (12), or a leadframe (11).
REFERENCES:
patent: 3902148 (1975-08-01), Drees et al.
patent: 4001655 (1977-01-01), Voyles et al.
patent: 4451973 (1984-06-01), Tateno et al.
patent: 4503452 (1985-03-01), Yokozawa et al.
patent: 4750030 (1988-06-01), Hatakeyama
patent: 4910581 (1990-03-01), Baird
patent: 4961107 (1990-10-01), Geist et al.
patent: 5034800 (1991-07-01), Marchisi
patent: 5038200 (1991-08-01), Hosomi et al.
patent: 5087962 (1992-02-01), de Vos et al.
patent: 5309027 (1994-05-01), Letterman
patent: 5367196 (1994-11-01), Mahulikar et al.
patent: 5389159 (1995-02-01), Kataoka et al.
patent: 5402006 (1995-03-01), O'Donley
patent: 5422788 (1995-06-01), Heinen et al.
patent: 5530286 (1996-06-01), Murakami et al.
patent: 5596231 (1997-01-01), Combs
Asher Reginald K.
Letterman, Jr. James P.
Collopy Daniel R.
Motorola Inc.
Seddon Kenneth M.
Williams Alexander Oscar
LandOfFree
Semiconductor device having an insulating layer and method for m does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device having an insulating layer and method for m, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having an insulating layer and method for m will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2129030