Semiconductor device having an insulated gate field effect trans

Details Semiconductor device having an insulated gate field effect trans Semiconductor device having an insulated gate field effect trans

1997-09-30

1999-08-10

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257339, 257369, 257372, H01L 2976, H01L 31113

Patent

active

059362901

ABSTRACT:
A CMOS semiconductor device comprises a well and a MOSFET adjacent to the well, wherein the distance between the channel region of the MOSFET is larger than the distance between the well and any of the source and drain of the MOSFET. The larger distance between the channel region and the well provides less fluctuation of the threshold voltage of the MOSFET.

REFERENCES:
patent: 3340598 (1967-09-01), Hatcher
patent: 5220191 (1993-06-01), Matsushita
patent: 5365110 (1994-11-01), Matsuoka
patent: 5373476 (1994-12-01), Jeon
patent: 5576570 (1996-11-01), Ohsawa et al.

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