Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-06-07
1997-11-04
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257356, 257357, 257358, 257379, H01L 2362, H01L 2976
Patent
active
056843216
ABSTRACT:
An input protection circuit is formed on a semiconductor substrate. A resistive element of an impurity diffusion region is electrically isolated from a main region of the substrate by a first double well structure. A bipolar transistor is connected to the resistive element which is electrically isolated from the main region of the substrate by a second double well structure. An input pad is connected to the bipolar transistor.
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Momodomi et al., "A Circular Output Protection Device Using Bipolar Action", 25th Annual Proceedings--Reliability Physics, Apr. 1987, San Diego, California, US, pp. 169-173.
Kabushiki Kaisha Toshiba
Martin Wallace Valencia
Saadat Mahshid D.
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