Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For plural devices
Reexamination Certificate
2005-07-05
2005-07-05
Mai, Anh Duy (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For plural devices
C257S531000, C257S711000
Reexamination Certificate
active
06914331
ABSTRACT:
A semiconductor device has a semiconductor chip, a first insulating film and an inductor. The semiconductor chip includes an integrated circuit formed on the main surface of the chip and a plurality of pad electrodes formed on the main surface of the chip and electrically connected to the integrated circuit. The first insulating film of an insulating resin material is formed on the main surface of the semiconductor chip, covers the integrated circuit, and includes a plurality of contact holes provided on the respective pad electrodes. The inductor is formed on the inductor formation region of the first insulating film, and both terminals of the inductor are connected to the pad electrodes through the contact holes, respectively. The inductor formation region of the first insulating film is formed thicker than a portion of the first insulating film around the contact hole.
REFERENCES:
patent: 6492198 (2002-12-01), Hwang
patent: 6559528 (2003-05-01), Watase et al.
patent: 6852616 (2005-02-01), Sahara et al.
patent: 2001/0045616 (2001-11-01), Yoshitomi
patent: 2002/0017730 (2002-02-01), Tahara et al.
patent: 2002/0093082 (2002-07-01), Miyamoto et al.
patent: 2004/0023450 (2004-02-01), Katagiri et al.
patent: 2001-093932 (2001-04-01), None
patent: 2001-230369 (2001-08-01), None
patent: 2002-57292 (2002-02-01), None
patent: 2002-164468 (2002-06-01), None
patent: 2003-347472 (2003-12-01), None
Kaino Kazuyuki
Miki Keiji
Nakamura Yoshifumi
Sahara Ryuichi
Shimoishizaka Nozomi
Duy Mai Anh
McDermott Will & Emery LLP
LandOfFree
Semiconductor device having an inductor formed on a region... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device having an inductor formed on a region..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having an inductor formed on a region... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3408145