Semiconductor device having an improved thin film transistor

Details Semiconductor device having an improved thin film transistor Semiconductor device having an improved thin film transistor

1994-10-28

1998-03-10

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Including semiconductor material other than silicon or...

Containing germanium, ge

257 67, 257 77, 257 78, 257190, 257191, 257192, H01L 2976, H01L 2922, H01L 31117

Patent

active

057264872

ABSTRACT:
The present invention is directed to a thin film transistor (TFT) structure having a channel region formed of a crystallized SiGe and is to provide a thin film transistor having a large carrier mobility. In this case, a channel region (4) is formed of a crystallized SiGe thin film.

REFERENCES:
patent: 4598305 (1986-07-01), Chiang et al.
patent: 4994866 (1991-02-01), Awano
patent: 5221365 (1993-06-01), Noguchi et al.
patent: 5241193 (1993-08-01), Pfiester et al.
patent: 5241197 (1993-08-01), Murakami et al.
patent: 5250818 (1993-10-01), Saraswat et al.

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