Semiconductor device having an improved structure and capable of

Details Semiconductor device having an improved structure and capable of Semiconductor device having an improved structure and capable of

1997-09-08

1999-11-02

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257357, 257371, H01L 2900

Patent

active

059775920

ABSTRACT:
A semiconductor device includes a source and a drain formed in a device region of a semiconductor substrate, and an electrode withdrawal portion having an impurity concentration higher than that of the device region. The electrode withdrawal portion is formed so as to adjoin either one of the source and drain. An electrode for the source or drain adjacent to the electrode withdrawal portion is used jointly as an electrode for the electrode withdrawal portion.

REFERENCES:
patent: 5355006 (1994-10-01), Iguchi
patent: 5581103 (1996-12-01), Mizukami
patent: 5670814 (1997-09-01), Wu et al.
patent: 5689132 (1997-11-01), Ichikawa
patent: 5734186 (1998-03-01), Honnigford et al.
Patent Abstracts of Japan, vol. 013, No. 068 (E-716), Feb. 16, 1989 & JP 63 252464 A (Mitsubishi Electric Corp), Oct. 19, 1988.
Patent Abstracts of Japan, vol. 005, No. 034 (E-048), Mar. 4, 1981 & JP 55 162270 A (Sharp Corp), Dec. 17, 1980.

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