Semiconductor device having an improved lead connection structur

Details Semiconductor device having an improved lead connection structur Semiconductor device having an improved lead connection structur

1998-07-16

2000-01-11

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257774, 257758, 257621, H01L 2348, H01L 2352, H01L 2940

Patent

active

06013951&

ABSTRACT:
A first polycide lead, which is formed on a silicon substrate, consists of a first doped polysilicon layer and a first tungsten silicide layer that is formed on the first doped polysilicon layer. An interlayer insulating film, which is formed on the silicon substrate, has an opening that reaches the first doped polysilicon layer. A second polycide lead, which is formed on the interlayer insulating film, consists of a second doped polysilicon layer that is connected to the first polycide lead in the opening and a second tungsten silicide layer that is formed on the second doped polysilicon layer. In the opening, the first and second doped polysilicon layers are in contact with each other at the side surfaces of the first polycide lead.

REFERENCES:
patent: 3585461 (1971-06-01), Eynon et al.
patent: 3831068 (1974-08-01), Kniepkamp
patent: 4291322 (1981-09-01), Clemens et al.
patent: 5017510 (1991-05-01), Welch et al.
patent: 5387812 (1995-02-01), Forouhi et al.
patent: 5476814 (1995-12-01), Ohshima et al.
patent: 5894170 (1999-04-01), Ishikawa

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