Semiconductor device having an improved interconnection and meth

Details Semiconductor device having an improved interconnection and meth Semiconductor device having an improved interconnection and meth

1998-05-20

2000-08-01

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Fet configuration adapted for use as static memory cell

257377, 257775, H01L 2711

Patent

active

060971037

ABSTRACT:
P.sup.+ -type source/drain regions for load transistors and N.sup.+ -type source/drain regions for driver transistors are connected by means of P.sup.+ -type source/drain region outgoing lead and N.sup.+ -type source/drain region outgoing lead via direct contact holes. The drain region outgoing lead for the load transistors and ground lead are formed in a three-dimensionally overlapping manner, and the drain region outgoing lead for the driver transistors connected to memory nodes on one side and the drain region outgoing lead for the load transistors connected to memory nodes on the other side are also formed in a three-dimensionally overlapping manner, whereby memory node charge accumulators are constituted.

REFERENCES:
patent: 5294822 (1994-03-01), Verrett
patent: 5640037 (1997-06-01), Blanchard
patent: 5677557 (1997-10-01), Wuu et al.
patent: 5682052 (1997-10-01), Hodges et al.
patent: 5717240 (1998-02-01), Kuriyama et al.
patent: 5821590 (1998-10-01), Lee et al.

Affiliated with

Also associated with

Rating

Semiconductor device having an improved interconnection and meth does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having an improved interconnection and meth, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having an improved interconnection and meth will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-666878