Semiconductor device having an improved dual-gate field effect t

Details Semiconductor device having an improved dual-gate field effect t Semiconductor device having an improved dual-gate field effect t

1982-09-17

1985-10-08

James, Andrew J.

Optics: image projectors

Plural projection paths with single light source

353 2314, 353 65, 353 68, H01L 2978, H01L 2348, H01L 2352

Patent

active

045463719

ABSTRACT:
A semiconductor device having a semiconductor body includes a field effect transistor and an active transistor region with two electrode zones, one of which surrounds the other, and an island zone which is situated therebetween. These zones enclose channel regions over which there are provided gate electrodes, the first one of which surrounds the second. The gate electrodes are connected to bond pads present outside the active transistor region. The first gate electrode is interrupted at the area of the connection from the second gate electrode to a bond pad, both its ends being connected to another bond pad. Even at very high frequencies, the transistor exhibits a high gain, a high transconductance and a low input attenuation.

REFERENCES:
patent: 3427514 (1969-02-01), Olmstead et al.
patent: 3609412 (1971-09-01), Okumura
patent: 3749985 (1973-07-01), Dawson
patent: 3803461 (1974-04-01), Beneking
patent: 3943286 (1976-03-01), Tsurushima
patent: 3999210 (1976-12-01), Yamada

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