Semiconductor device having an expanded storage node contact...

Details Semiconductor device having an expanded storage node contact... Semiconductor device having an expanded storage node contact...

2011-01-18

2011-01-18

Smith, Matthew S (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S243000, C438S244000, C438S248000, C257SE29020

Reexamination Certificate

active

07872313

ABSTRACT:
A semiconductor device is disclosed that stably ensures an area of a storage node contact connected to a junction region in an active region of the semiconductor device and is thus able to improve the electrical properties of the semiconductor device and enhance a yield, and a method for fabricating the same. The semiconductor device includes a semiconductor substrate having an active region including a gate, a storage node contact region, and an isolation region that defines the active region. A passing gate and an isolation structure surrounding the passing gate are formed in the isolation region. A silicon epitaxial layer is selectively formed over an upper portion of the passing gate to expand the storage node contact region.

REFERENCES:
patent: 7387941 (2008-06-01), Lee
patent: 2006/0084224 (2006-04-01), Watanabe et al.
patent: 2007/0173005 (2007-07-01), Lee
patent: 2007/0173015 (2007-07-01), Im
patent: 2007/0269946 (2007-11-01), Wang et al.

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