Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-07-08
1996-02-06
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257356, 257754, 257758, 257773, 257776, 257784, H01L 2362, H01L 2348, H01L 2352
Patent
active
054897939
ABSTRACT:
There are provided a plurality of standard cell blocks (2) within an IC chip (1), and an aluminium wiring layer is formed in an aluminium wiring region (8) provided between the standard cell blocks (2) to electrically connect the standard cell blocks (2) to each other. An n-type epitaxial region (4), a p-type diffusion region (5) and an n-type diffusion region (6) are incorporated in an underlayer of the aluminium wiring region (8), to thereby form an evaluation device which is an npn bipolar transistor under the aluminium wiring region (8). A semiconductor device which is capable of accurately evaluating its finished product by the inspection of the evaluation device is provided without the damage of an integration level.
REFERENCES:
patent: 4144493 (1979-03-01), Lee et al.
patent: 4197632 (1980-04-01), Aomura
patent: 4283733 (1981-08-01), Aomura
patent: 4413271 (1983-11-01), Gontowski, Jr. et al.
patent: 5055715 (1991-10-01), Inaba
patent: 5144389 (1992-09-01), Nakamura et al.
Matsusako Takuo
Satsuma Kazumasa
Hille Rolf
Martin Wallace Valencia
Mitsubishi Denki & Kabushiki Kaisha
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