Semiconductor device having an etch stopper formed of a sin...

Details Semiconductor device having an etch stopper formed of a sin... Semiconductor device having an etch stopper formed of a sin...

2005-02-22

2005-02-22

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257S387000, C257S586000

Reexamination Certificate

active

06858533

ABSTRACT:
Provided are a semiconductor device having an etch stopper formed of a nitride film by low temperature atomic layer deposition which can prevent damage to a semiconductor substrate and a method for fabricating the semiconductor device. Damage to the semiconductor substrate under the etch stopper composed of a second nitride film can be prevented by forming a first nitride film using high temperature LPCVD on the semiconductor substrate, forming the etch stopper including the second nitride film by low temperature ALD on the first nitride film, and removing the second nitride film by dry etching, thus taking advantage of the different etch selectivities of the first nitride film and the second nitride film.

REFERENCES:
patent: 20030073308 (2003-04-01), Mercaldi
patent: 20030109107 (2003-06-01), Hsieh et al.
patent: P2002-0030569 (2002-04-01), None

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