Semiconductor device having an electrostatic discharge...

Details Semiconductor device having an electrostatic discharge... Semiconductor device having an electrostatic discharge...

2007-02-27

2007-02-27

Lee, Eugene (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27030, C438S190000

Reexamination Certificate

active

11014702

ABSTRACT:
In an ESD protecting element, a plurality of source regions and a plurality of ballast resistor regions are formed. A drain region is formed at a region which is in contact with a channel region in the ballast resistor region, and an n+type diffusion region is formed at a region isolated from the drain region via an STI region. A third contact is provided on the drain region, first and second contacts are formed on the n+type diffusion region, and the first contact is connected to a pad. The second contact is coupled to the third contact by a metal wire. The first and second contacts are laid out along the widthwise direction of a gate.

REFERENCES:
patent: 5811856 (1998-09-01), Lee
patent: 5844281 (1998-12-01), Narita
patent: 6587320 (2003-07-01), Russ et al.
patent: 2003/0227053 (2003-12-01), Nomura et al.
patent: 2004/0164354 (2004-08-01), Mergens et al.
patent: 2005/0045952 (2005-03-01), Chatty et al.
patent: 02-271674 (1990-11-01), None
patent: 2773221 (1998-04-01), None
patent: 2001-284583 (2001-10-01), None
By Koen G. Verhaege and Christian C. Russ, “Wafter Cost Reduction through Design of High Performance Fuly Silicided EDS Devices”, EOS/ESD Symposium, 2000, No. 18, pp. 1A.3.1 to 1A.3.11.

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