Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-03-19
2000-03-07
Everhart, Caridad
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438713, 438720, 438945, H01L 2144
Patent
active
060339861
ABSTRACT:
A barrier metal film, Al alloy film and anti-reflective film are sequentially deposited on a surface to form an interconnect pattern by a photolithography technique. An overhanging portion of the anti-reflective film is etched away by a plasma of a Cl.sub.2 /BCl.sub.3 -mixed gas. Then an insulating interlayer is deposited on a resultant semiconductor structure.
REFERENCES:
patent: 4919748 (1990-04-01), Bredbenner et al.
patent: 5174856 (1992-12-01), Hwang et al.
patent: 5277757 (1994-01-01), Sato
Everhart Caridad
Kabushiki Kaisha Toshiba
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