Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Configuration or pattern of bonds
Reexamination Certificate
2007-12-25
2007-12-25
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Configuration or pattern of bonds
C257S737000
Reexamination Certificate
active
10803832
ABSTRACT:
The objects of the present invention is to improve the impact resistance of the semiconductor device against the impact from the top surface direction, to improve the corrosion resistance of the surface of the top layer interconnect, to inhibit the crack occurred in the upper layer of the interconnect layer when the surface of the electrode pad is poked with the probe during the non-defective/defective screening, and to prevent the corrosion of the interconnect layer when the surface of electrode pad is poked with the probe during the non-defective/defective screening. A Ti film116, a TiN film115and a pad metal film117are formed in this sequence on the upper surface of a Cu interconnect112.The thermal annealing process is conducted within an inert gas atmosphere to form a Ti—Cu layer113,and thereafter a polyimide film118is formed, and then a cover through hole is provided thereon to expose the surface of the pad metal film117,and finally a solder ball120is joined thereto.
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Kunimune Yorinobu
Oda Noriaki
Takewaki Toshiyuki
Karimy Mohammad Timor
Muirhead and Saturnelli LLC
NEC Electronics Corporation
Parker Kenneth
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