Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1996-10-15
1999-02-09
Ostrowski, David
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257764, 257765, 257767, 257770, 257771, H01L 2348, H01L 2352
Patent
active
058699015
ABSTRACT:
A semiconductor device and a method of manufacturing the same are provided which comprises a metal interconnection consisting of a titanium-aluminum film with (111) orientation formed on a semiconductor substrate via an insulating film, and an aluminum film or an aluminum alloy film with (111) orientation formed on the titanium-aluminum film by virtue of epitaxial growth. With such structure, electromigration endurance of an aluminum interconnection is improved and a wiring structure of a semiconductor is achieved with high reliability.
REFERENCES:
patent: 4017890 (1977-04-01), Howard et al.
patent: 4438450 (1984-03-01), Sheng et al.
patent: 4989064 (1991-01-01), Kubokoya et al.
patent: 5331187 (1994-07-01), Ogawa
patent: 5360996 (1994-11-01), Nulman et al.
patent: 5498909 (1996-03-01), Hasunuma et al.
patent: 5581125 (1996-12-01), Maeda
patent: 5641992 (1997-06-01), Lee et al.
Onoda et al., "Analysis of Electromigration-induced Failures in High-temperature Sputtered Al-alloy Metallization", J. Vac. Sci. Technol. B 13(4), (1995), pp. 1546-1555.
"Formation of Texture Controlled Aluminum and Its Migration Performance in Al-Si/TiN Stacked Structure", Kageyama et al., IEEE 1991., p. 197.
The Effects of Al(111) Crystal Orientation on Electromigration in Half-Micron Layered Al Interconnects, Shibata et al., Japanese Journal of Applied Phys., vol. 32, (1993) pp. 4479-4484.
"Atomic Transportation in LSI Interconnection", preprint of Stress Problem Society, Thin Film Surface Symposium of Institute of Japanese Applied Physics, May 27, 1994, Tokyo pp.19-20.
"Generation of Amorphous Thin Film by Evaporation", Applied Physics, vol. 45, No. 12, pp. 1165-1171 (1976).
Nissan Motor Co,. Ltd.
Ostrowski David
LandOfFree
Semiconductor device having aluminum interconnection and method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device having aluminum interconnection and method , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having aluminum interconnection and method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1951831