Semiconductor device having aluminum contacts or vias and method

Details Semiconductor device having aluminum contacts or vias and method Semiconductor device having aluminum contacts or vias and method

1997-03-18

1999-06-15

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438643, 438648, 438660, 438664, 438672, 438685, 438688, 438663, H01L 214763

Patent

active

059131462

ABSTRACT:
A semiconductor device and a method of manufacture therefor. The semiconductor device includes: (1) a substrate having a recess therein, (2) an aluminum-alloy layer located over at least a portion of the substrate and filling at least a portion of the recess and (3) a protective metal layer at least partially diffused in the aluminum-alloy layer, the metal protective layer having a high affinity for oxygen and acting as a sacrificial target for oxygen during a reflow of the aluminum-alloy layer.

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Publication dated Jun. 15, 1992 by American Institute of Physics entitled "Roles of T1-intermetallic compound layers on the electromigration resistance of Al-Cu interconnecting stripes" by C.C. Lee of Motorola, Inc.

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