Semiconductor device having aligned semiconductor regions and a

Details Semiconductor device having aligned semiconductor regions and a Semiconductor device having aligned semiconductor regions and a

1994-07-06

1996-05-21

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257324, 257326, 257399, 257370, 257500, G11C 1134

Patent

active

055192440

ABSTRACT:
The present invention deals with a semiconductor memory circuit device, in which a memory array portion of a rectangular shape consisting of semiconductor non-volatile memory elements is formed on a main surface of the semiconductor substrate, a low voltage driver circuit (decoder) is formed along a side of the memory array portion, and a high voltage driver circuit is formed along an opposite side of the memory array portion. This permits a reduction in word line length and avoids crossing of the word lines to permit increased operation speed and, particularly, increased reading speed.

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