Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-04-05
2005-04-05
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S117000, C257S127000, C257S244000, C257S280000, C257S281000, C257S284000, C257S332000
Reexamination Certificate
active
06876034
ABSTRACT:
A semiconductor device having grooves uniformly filled with semiconductor fillers is provided. Both ends of each of narrow active grooves are connected to an inner circumferential groove surrounding the active grooves. The growth speed of semiconductor fillers on both ends of the active grooves becomes equal to that at their central portions. As a result, a semiconductor device having the active grooves filled with the semiconductor fillers at a uniform height is obtained.
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Kitada Mizue
Kunori Shinji
Kurosaki Toru
Ohshima Kosuke
Shishido Hiroaki
Armstrong, Kratz, Quintos Hanson & Brooks, LLP.
Shindengen Electric Manufacturing Co. Ltd.
Tran Minhloan
Tran Tan
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