Semiconductor device having a wiring layer including a TISI2, fi

Details Semiconductor device having a wiring layer including a TISI2, fi Semiconductor device having a wiring layer including a TISI2, fi

1997-08-08

1998-09-01

Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257369, 257384, 257385, 257388, 257486, 257914, H01L 2976, H01L 2947, H01L 2912

Patent

active

058014250

ABSTRACT:
A gate electrode is made up of a polycrystalline silicon film containing phosphorous as a dopant for determining its conductivity type, a titanium silicide film of the C54 structure, and a tungsten silicide film all of which films are laid one on another in said order.

REFERENCES:
patent: 5027185 (1991-06-01), Liauh
patent: 5146309 (1992-09-01), Spinner et al.
patent: 5221853 (1993-06-01), Joshi et al.
patent: 5514902 (1996-05-01), Kawasaki et al.
patent: 5518958 (1996-05-01), Giewont et al.
patent: 5550079 (1996-08-01), Lin
"W/WNx/Poly-Si Gate Technology for Future High Speed Deep Submicron CMOS LSIs," K. Kasai et al., Tech. Dig. IEDM 1994, pp. 497-500.

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