Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-08-08
1998-09-01
Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257369, 257384, 257385, 257388, 257486, 257914, H01L 2976, H01L 2947, H01L 2912
Patent
active
058014250
ABSTRACT:
A gate electrode is made up of a polycrystalline silicon film containing phosphorous as a dopant for determining its conductivity type, a titanium silicide film of the C54 structure, and a tungsten silicide film all of which films are laid one on another in said order.
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patent: 5221853 (1993-06-01), Joshi et al.
patent: 5514902 (1996-05-01), Kawasaki et al.
patent: 5518958 (1996-05-01), Giewont et al.
patent: 5550079 (1996-08-01), Lin
"W/WNx/Poly-Si Gate Technology for Future High Speed Deep Submicron CMOS LSIs," K. Kasai et al., Tech. Dig. IEDM 1994, pp. 497-500.
Kuroi Takashi
Oda Hidekazu
Mitsubishi Denki & Kabushiki Kaisha
Wallace Valencia
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