Semiconductor device having a wiring layer and method for manufa

Details Semiconductor device having a wiring layer and method for manufa Semiconductor device having a wiring layer and method for manufa

1996-03-04

1998-12-01

Tsai, Jey

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438660, 438656, 438672, 438685, H01L 2128

Patent

active

058438408

ABSTRACT:
In a semiconductor device having a metal wiring conductor connected to a contact hole formed through an interlayer insulator layer formed on a lower level circuit, a lower level tungsten film is deposited under a condition giving an excellent step coverage so as to fill the contact hole, and an upper level tungsten film is further deposited under a condition of forming a film having a stress smaller than that of the lower level tungsten film. The metal wiring conductor is formed of a double layer which is composed of the lower level tungsten film and the upper level tungsten film, and therefore, has a reduced stress in the whole of the film. Thus, there is obtained the tungsten film wiring conductor which fills the inside of the contact hole with no void and therefore has a high reliability, and which has a low film stress. In addition, the number of steps in the manufacturing process can be reduced.

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Thomas E. Clark, et al. "High Pressure Blanket CVD Tungsten," Solid State Technology Japanese Edition, Dec., 1989.

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