Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-11-13
2007-11-13
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S659000, C257S903000
Reexamination Certificate
active
10961927
ABSTRACT:
A semiconductor device with improved soft error rate immunity and latch-up immunity and a method of forming the same. The device includes first wells of first conductivity type and second well of second conductivity type formed in the semiconductor substrate of first conductivity type. First conductivity type MOSFETs including source/drain of first conductivity type are formed in the second well, and second conductivity type MOSFETs including source/drain of second conductivity type in the first well. A third well of second conductivity type is formed at a region under the first wells and the drain of the second conductivity type MOSFETs. The first well is connected to the semiconductor substrate between the first well and the third well.
REFERENCES:
patent: 5877051 (1999-03-01), Manning
patent: 6472715 (2002-10-01), Liu et al.
patent: 6500705 (2002-12-01), Kumagai
patent: 2001-057393 (2001-02-01), None
patent: 1020030001971 (2003-08-01), None
English language abstract of Korea Publication No. 1020030001971.
English language abstract of Japan Publication No. 2001-057393.
Richard S. Muller and Theodore “Device Electronics For Integrated Circuits”, pp. 458-465.
Marger & Johnson & McCollom, P.C.
Prenty Mark V.
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