Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-06-13
1997-08-12
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257339, 257341, 257342, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
056568436
ABSTRACT:
A semiconductor device (1) includes a vertical insulated gate field effect device (2) and has a semiconductor body (3) with a first semiconductor region (4) of one conductivity type adjacent one major surface (5). A second semiconductor region (6) of the opposite conductivity type is former within the first region (4) adjacent the surface (5) and a third region (7) forms with the second region (6) a rectifying junction (8) meeting the one major surface (5). A recess (9) extends into the first region (4) from the one major surface (5) so that the second and third regions (6 and 7) abut the recess (9), and an insulated gate (10) is formed within the recess (9) for controlling conduction between the first and third regions (4 and 7) along a conduction channel area (61) of the second region (6). A fourth region (11) of the one conductivity type forms with a portion (6b) of the second region (6) of the opposite conductivity type remote from the recess (9) a further rectifying junction (12) which is reverse-biassed in at least one mode of operation of the device and has a predetermined breakdown voltage for causing the device to breakdown in the vicinity of the further rectifying junction (12) away from the recess (9) when a critical voltage is exceeded.
REFERENCES:
patent: 4573066 (1986-02-01), Whight
patent: 4707719 (1987-11-01), Whight
patent: 4774560 (1988-09-01), Coe
patent: 4931846 (1990-06-01), Mihara
patent: 4983535 (1991-01-01), Blanchard
patent: 5072266 (1991-12-01), Bulucea et al.
Goodyear Andrew L.
Hutchings Keith M.
Biren Steven R.
Loke Steven H.
U.S. Philips Corporation
Wieghaus Brian J.
LandOfFree
Semiconductor device having a vertical insulated gate field effe does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device having a vertical insulated gate field effe, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having a vertical insulated gate field effe will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-162187