Semiconductor device having a two layered structure gate electro

Details Semiconductor device having a two layered structure gate electro Semiconductor device having a two layered structure gate electro

1991-11-08

1993-01-05

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257368, 257627, 257754, H01L 2978

Patent

active

051775697

ABSTRACT:
A semiconductor device not aggravated in transistor characteristic even when an impurity region is formed by ion implantation using a gate electrode as a mask, and a method of manufacturing thereof are disclosed. The semiconductor device includes a gate electrode 10 implemented by a polycrystal silicon layer 4 having the crystal orientation of the crystal grains thereof arranged in a predetermined orientation, and a single crystal silicon layer 5 formed on the polycrystal silicon layer 4 having a crystal orientation identical to that of the polycrystal silicon layer 4. The channelling phenomenon in which B.sup.+ ions pass through to beneath the gate electrode 10 is prevented in forming an impurity region 6 by ion implantation to obtain a semiconductor device that does not have the characteristic of the formed transistor aggravated.

REFERENCES:
patent: 4808555 (1989-02-01), Mauntel et al.
patent: 4897368 (1990-01-01), Kobushi et al.
MOS LSI Manufacturing Technology, Nikkei McGraw-Hill, pp. 89-91, 1985.

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