Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1992-05-18
1993-11-02
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257 24, 257194, 257617, 257610, H01L 2906, H01L 31072, H01L 2930, H01L 29167
Patent
active
052586316
ABSTRACT:
This invention discloses a heterojunction type field effect transistor such as 2DEG-FET and a heterojunction type bipolar transistor such as 2DEG-HBT. The former is fabricated by applying to the formation of its source and drain regions a technique which causes the disorder of the heterojunction by introduction of an impurity such as by ion implantation or a technique which causes the disorder of the heterojunction by forming a film made of at least one kind of material selected from insulators, metals and semiconductors which have a different linear coefficient of thermal expansion from that of the material of a semiconductor substrate on the heterojunction semiconductor region which is to be disordered. The latter is fabricated by applying either of the techniques described above to a base ohmic contact region. These semiconductor devices can reduce the source-gate resistance and the parasitic base resistance. The invention discloses also the structure of the ohmic contact layer which has a trench on the surface thereof and is particularly effective for reducing the source-gate parasitic resistance.
REFERENCES:
patent: 4695857 (1987-09-01), Baba et al.
patent: 4916498 (1990-04-01), Berenz
patent: 4937204 (1990-06-01), Ishibashi et al.
"Resonant Tunneling Through Quantum Wells at Frequencies up to 2.5 THz"; Sollner et al; Applied Plysics Letters; Sep. 5, 1983.
Goto Shigeo
Hiruma Kenji
Imamura Yoshinori
Kawata Masahiko
Mitani Katsuhiko
Fahmy Wael
Hille Rolf
Hitachi , Ltd.
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