Semiconductor device having a two-channel MISFET arrangement def

Details Semiconductor device having a two-channel MISFET arrangement def Semiconductor device having a two-channel MISFET arrangement def

1993-07-29

1996-08-06

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257351, 257368, 257369, 257379, 257380, 257903, 257904, H01L 2701, H01L 2976, H01L 2711

Patent

active

055436528

ABSTRACT:
Negative characteristic MISFETs, which are of the same channel conductivity type and which have different threshold voltages, are formed in a doped silicon thin film deposited over a substrate and are connected in channel-to-channel series with each other. The pair of series-connected negative characteristic MISFETs, a resistive element, an information storage capacitive element and a transfer MISFET constitute an SRAM memory cell. Equivalently, a negative characteristic MISFET having a current-voltage characteristic defined by a negative resistance curve can be used in lieu of the pair of series-connected negative characteristic MISFETs in the formation of the individual memory cells of the SRAM. The negative resistance curve of the negative characteristic MISFET is shaped such that the linear current-voltage characteristic curve corresponding to the resistive element of the memory cell intersects the negative resistance curve at at least three location points. The negative characteristic MISFET, like the pair of series-connected negative characteristic MISFETs, has an active region formed in a doped thin film silicon (polycrystalline silicon) layer insulatedly above a substrate main surface. The resistive element is also formed in a thin film silicon layer either integrally with the negative characteristic MISFET or in a separate thin film silicon layer and in series electrical connection with the negative characteristic MISFET.

REFERENCES:
patent: 4481524 (1984-11-01), Tsujide
patent: 4682200 (1987-07-01), Uchida et al.
patent: 4890148 (1989-12-01), Ikeda et al.
patent: 5005068 (1991-04-01), Ikeda et al.
patent: 5122857 (1992-06-01), Ikeda et al.
patent: 5132771 (1992-07-01), Yamanaka et al.
patent: 5296729 (1994-03-01), Yamanaka et al.

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