Semiconductor device having a tri-layer gate insulating dielectr

Details Semiconductor device having a tri-layer gate insulating dielectr Semiconductor device having a tri-layer gate insulating dielectr

1997-12-19

2000-05-02

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257295, 257310, H01L 2978

Patent

active

060575840

ABSTRACT:
A semiconductor device having a gate insulating tri-layer includes a substrate, a nitrogen-containing layer disposed on the substrate, a first dielectric layer disposed over the nitrogen containing layer, a second dielectric layer disposed over the first dielectric layer, and a gate electrode disposed over the second dielectric layer. One of the first and second dielectric layers is formed using an oxide having a dielectric constant ranging from 4 to 100 and the other of the first and second dielectric layers is formed using an oxide having a higher dielectric constant ranging from 10 to 10,000.

REFERENCES:
patent: 5572052 (1996-11-01), Kashihara et al.
patent: 5834353 (1998-11-01), Wu
patent: 5963810 (1999-10-01), Gardner et al.
U.S. application No. 08/920,384, filed Aug. 29, 1997.
U.S. application No. 08/993,414, filed Dec. 18, 1997.

Affiliated with

Also associated with

Rating

Semiconductor device having a tri-layer gate insulating dielectr does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having a tri-layer gate insulating dielectr, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having a tri-layer gate insulating dielectr will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1595869