Semiconductor device having a transistor, a ferroelectric capaci

Details Semiconductor device having a transistor, a ferroelectric capaci Semiconductor device having a transistor, a ferroelectric capaci

1994-05-06

1996-06-04

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257310, 257637, H01L 2968

Patent

active

055235956

ABSTRACT:
A semiconductor device having a ferroelectric film or a polycrystalline silicon gate, a humidity-resistant hydrogen barrier film, like TiN film, TiON film, etc., formed by hydrogen non-emission film forming method over the ferroelectric film or the polycrystalline silicon gate.

REFERENCES:
patent: 4675715 (1987-06-01), Lepselter et al.
patent: 4811078 (1989-03-01), Tigelaar et al.
patent: 4959745 (1990-09-01), Suguro
patent: 5070036 (1991-12-01), Stevens
patent: 5119154 (1992-06-01), Gnadinger
patent: 5319246 (1994-06-01), Nagamine et al.

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